By Kenneth L. Ashley

Booklet by way of Ashley, Kenneth L.

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For example, for a –10-V power supply, we choose IDRD 5 V. A measurement of λp for our devices will show that λp 1/20 V, which results in λpIDRD 1/4. Thus, the effect of gds (= λpID) for this case is significant. 13) of gm and gds are used here, which are independent of VSD. 13), respectively, are repeated here: and The "exact" equations of gm and gds are used in conjunction with the amplifier projects to compare the computed gain with the measured gain plotted against ID. This is done in both LabVIEW and Mathcad.

Parameter KPn is related to the electron mobility in the channel and the oxide thickness. Therefore, it is very specific to a given MOSFET device. As VDS increases, but is less than Veffn [transition from Fig. 4. 5), is applicable for VDS up to VDS = Veffn, which is the boundary of the linear and active regions. 6 This active-region current corresponds to the zero-slope ideal curve in Fig. 3. 1, the drain current is not actually constant in the active region (in the same manner as for a BJT), due to the fact that the physical length of the channel is reduced for increasing VDS beyond VDS = Veffn.

To clarify this point, reference is made to the output characteristics of Fig. 5. The graph has plots of the output characteristic for three values of vGS in addition to the load line. The characteristic plot in the midrange is for no signal. 5 V and ID 40 μA. With a large, positive Vgs, the characteristic moves up to the high-level plot (iDhi) and the opposite occurs for a large but negative Vgs (iDlo). The high-level plot is shown for when the transistor is about to move out of the active region and into the linear region.

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